1 features ? lambertian radiation pattern ? anode-up design (p-pad up) ? ezbright led technology, binned @ 350 ma C 450 nm - 560+ mw C 460 nm - 560+ mw ? low forward voltage (vf) C 3.0 v typical at 350 ma ? maximum dc forward current C 1500 ma ? backside metal versions for various attach methods: -a (ausn) for use with conductive adhesives, flux eutectic attach, solder paste & solder preforms -g (ltda) for low temperature flux eutectic attach cree ? ez1350-p? leds data sheet (anode-up) c xxx ez1350-s xxx 00- x crees ezbright ? leds are the newest generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary optical design and device submount technology to deliver superior value for high- intensity leds. the optical design maximizes light extraction effciency and enables a lambertian radiation pattern. additionally, these leds are die-attachable with conductive adhesive, solder paste or solder preforms, as well as fux eutectic attach. these vertically structured, low forward voltage led chips are approximately 170 microns in height and are tested for conformity to optical and electrical specifcations. crees ez? chips are useful in a broad range of applications such as general illumination, automotive lighting and mobile fash. d a t a s h e e t : c p r 3 f y r e v a c xxx ez1350-s xxx 00- x chip diagram anode (+), 2 places 1330 x 1330 m thickness, 170 m backside ohmic metallization cathode ( - ) bottom view side view top view bond pads (2), 130 x 13 0 m mesa (junction), 1300 x 1300 m applications ? general illumination C aircraft C decorative lighting C task lighting C outdoor illumination ? white leds ? projection displays ? automotive exterior ? mobile flash subject to change without notice. www.cree.com
2 maximum ratings at t a = 25c note 1 c xxx ez1350-s xxx 00- x dc forward current 1500 ma peak forward current (1/10 duty cycle @ 1 khz) 2000 ma led junction temperature 150c reverse voltage 5 v operating temperature range -40c to +100c led chip storage temperature -40c to +120c recommended die sheet storage conditions 30c / 85% rh typical electrical/optical characteristics at t a = 25c, if = 350 ma note 2 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( o d , nm) min. typ. max. max. typ. c450ez1350-s xxxx 00- x 2.6 3.0 3.4 2 20 c460ez1350-s xxxx 00- x 2.6 3.0 3.4 2 21 mechanical specifcations c xxx ez1350-s xxx 00- x description dimensions tolerance p-n junction area (m) 1300 x 1300 35 chip area (m) 1330 x 1330 35 chip thickness (m) 170 25 top au bond pad (m) - qty. 2 130 x 130 25 au bond pad thickness (m) 3.0 1.5 backside ohmic metal area (m) 1330 x 1330 35 backside ohmic metal thickness (m) 3.3 1.5 notes: 1. maximum ratings are package-dependent. the above ratings were determined using a silicone encapsulated chip on mcpcb for characterization. ratings for other packages may differ. the junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). see cree ezbright applications note for assembly-process information. 2. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 350 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. all measurements were made using a au-plated to39 header without an encapsulant. optical characteristics were measured in an integrating sphere using illuminance e. 3. the maximum forward current is determined by the thermal resistance between the led junction and ambient. it is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the led junction to ambient in order to optimize product performance. 0 200 400 600 800 1000 1200 1400 1600 25 50 75 100 125 150 maximum opeatin cuent (ma) amient tempeatue ( c) th - a 5 c th - a 10 c th - a 15 c th - a 20 c ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez1350-p? are trademarks of cree, inc. cpr3fy rev a (201502) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
3 standard bins for c xxx ez1350-s xx x00- x led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez1350-s xxx00-x ) orders may be flled with any or all bins (c xxx ez1350-0 xxx-x ) contained in the kit. all radiant fux and dominant wavelength values shown and specifed are at if = 350 ma. radiant fux values are measured using au-plated headers without an encapsulant. C450EZ1350-S56000-X c450ez1350-0225-x c450ez1350-0226-x c450ez1350-0227-x c450ez1350-0228-x c450ez1350-0221-x c450ez1350-0222-x c450ez1350-0223-x c450ez1350-0224-x c450ez1350-0217-x c450ez1350-0218-x c450ez1350-0219-x c450ez1350-0220-x c450ez1350-0213-x c450ez1350-0214-x c450ez1350-0215-x c450ez1350-0216-x c450ez1350-0209-x c450ez1350-0210-x c450ez1350-0211-x c450ez1350-0212-x c450ez1350-0205-x c450ez1350-0206-x c450ez1350-0207-x c450ez1350-0208-x 660 640 620 600 580 560 dominant wavelength (nm) 447.5 450 452.5 445 455 c460ez1350-s56000-x c460ez1350-0225-x c460ez1350-0226-x c460ez1350-0227-x c460ez1350-0228-x c460ez1350-0221-x c460ez1350-0222-x c460ez1350-0223-x c460ez1350-0224-x c460ez1350-0217-x c460ez1350-0218-x c460ez1350-0219-x c460ez1350-0220-x c460ez1350-0213-x c460ez1350-0214-x c460ez1350-0215-x c460ez1350-0216-x c460ez1350-0209-x c460ez1350-0210-x c460ez1350-0211-x c460ez1350-0212-x c460ez1350-0205-x c460ez1350-0206-x c460ez1350-0207-x c460ez1350-0208-x 660 640 620 600 580 560 457.5 460 462.5 455 465 dominant wavelength (nm) radiant flux (mw) radiant flux (mw) ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez1350-p? are trademarks of cree, inc. cpr3fy rev a (201502) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
4 characteristic curves, t a = 25c this is a representative measurement for the ez1350 led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 100% 200% 300% 400% 500% 0 500 1000 1500 2000 relative light intensity if (ma) relative intensity vs. forward current - 2 - 1 0 1 2 0 500 1000 1500 2000 dw shift (nm) if (ma) wavelength shift vs. forward current 0 250 500 750 1000 1250 1500 1750 2000 2 2.5 3 3.5 4 if (ma) vf (v) forward current vs. forward voltage - 0.400 - 0.350 - 0.300 - 0.250 - 0.200 - 0.150 - 0.100 - 0.050 0.000 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 dw shift (nm) junction temperature ( c) dominant wavelength shift vs junction temperature 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 relative light intensity junction temperature ( c) relative light intensity vs junction temperature ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez1350-p? are trademarks of cree, inc. cpr3fy rev a (201502) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
5 radiation pattern this is a representative radiation pattern for the ez led products. actual patterns will vary slightly for each chip. ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez1350-p? are trademarks of cree, inc. cpr3fy rev a (201502) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
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